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AS29LV400 - 3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time 3V 512K x 8/256K x16 CMOS Flash EEPROM

AS29LV400_2118963.PDF Datasheet


 Full text search : 3V 512K x 8/256K x 16 CMOS flash EEPROM, 700ns access time 3V 512K x 8/256K x16 CMOS Flash EEPROM


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GS880E18 GS880E36T-11 GS880E18T-11 GS880E32T-11.5I 512K X 18 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 11.5 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 512K X 18 CACHE SRAM, 11 ns, PQFP100
512K x 18, 256K x 32, 256K x 36 8Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 11 ns, PQFP100
8Mb12K x 18Bit) Synchronous Burst SRAM(8M位(512K x 18位)同步静态RAM(带2位脉冲地址计数器))
http://
GSI Technology, Inc.
IS61NP25632 IS61NP25636 IS61NP51218 IS61NP25632-5T 256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PQFP100
Quadruple 2-Input Positive-OR Gates 14-SOIC -40 to 85 256K X 36 ZBT SRAM, 5 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 36 ZBT SRAM, 4.2 ns, PBGA119
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 5 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K X 32 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 512K X 18 ZBT SRAM, 4.2 ns, PQFP100
256K x 32, 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM 256K × 3256K × 36和管道为512k × 18编号WAIT状态总线的SRAM
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
MX29LV400BXBI-70 MX29LV400TXBI-70 MX29LV400TXBC-55    4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
COG Technology, 240 x 160 pixel format
240 x 160 pixel format, Available with EL Backlight
CB 26C 26#16 PIN PLUG
4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 256K X 16 FLASH 3V PROM, 90 ns, PBGA48
Macronix International Co., Ltd.
PROM
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AT27BV400-15TI AT27BV400 AT27BV400-12JC AT27BV400- High Speed CMOS Logic 8-Stage Synchronous Down Counters 16-SOIC -55 to 125 256K X 16 OTPROM, 120 ns, PDSO48
4-Megabit 256K x 16 or 512K x 8 Unregulated Battery-Voltage High Speed OTP EPROM 256K X 16 OTPROM, 150 ns, PDSO48
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
CY7C1361C-133AXC CY7C1361C-133BGI CY7C1361C-133AJX 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA119
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 8.5 ns, PBGA165
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 9兆位56 × 36/512K × 18)流通过的SRAM
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM 256K X 36 CACHE SRAM, 6.5 ns, PBGA165
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
MX27C4096PC-10 MX27C4096PC-12 MX27C4096PC-15 MX27C 4M-BIT [512K x 8/256K x 16] CMOS EPROM
Macronix International
GS88136BGD-300I GS88132BT-200 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 36 CACHE SRAM, 5 ns, PBGA165
512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs 256K X 32 CACHE SRAM, 6.5 ns, PQFP100
GSI Technology, Inc.
MX29LV400CBTC-90G MX29LV400CTXHI-70Q 29LV400C-55R 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MCNIX[Macronix International]
MX29LV401BTI-70 MX29LV401BTI-90 MX29LV401T MX29LV4 4M-BIT [512K x 8 / 256K x 16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
MCNIX[Macronix International]
 
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